WG601 MOS transistor 650V 1A N channel SOT23-3 1N65
Low Intrinsic Capacitances.□ Excellent Switching Characteristics.□ Extended Safe OperatingArea.□ Unrivalled Gate Charge :Qg= 6 nC (Typ.)BVDSS=650 V,ID=1A□ RDS(on) : 17 ? (Max) @VG=10V□ 100% Aval...
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